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Collaborative Laboratories for Advanced Decommissioning Science; National Institute of Technology, Kisarazu College*
JAEA-Review 2021-043, 135 Pages, 2022/01
JAEA-Review-2021-043.pdf:5.39MB
The Collaborative Laboratories for Advanced Decommissioning Science (CLADS), Japan Atomic Energy Agency (JAEA), had been conducting the Nuclear Energy Science & Technology and Human Resource Development Project (hereafter referred to "the Project") in FY2020. The Project aims to contribute to solving problems in the nuclear energy field represented by the decommissioning of the Fukushima Daiichi Nuclear Power Station, Tokyo Electric Power Company Holdings, Inc. (TEPCO). For this purpose, intelligence was collected from all over the world, and basic research and human resource development were promoted by closely integrating/collaborating knowledge and experiences in various fields beyond the barrier of conventional organizations and research fields. The sponsor of the Project was moved from the Ministry of Education, Culture, Sports, Science and Technology to JAEA since the newly adopted proposals in FY2018. On this occasion, JAEA constructed a new research system where JAEA-academia collaboration is reinforced and medium-to-long term research/development and human resource development contributing to the decommissioning are stably and consecutively implemented. Among the adopted proposals in FY2018, this report summarizes the research results of the "Development of dosimetry device in reactor cores under severe radiation environment" conducted from FY2018 to FY2020. Since the final year of this proposal was FY2020, the results for three fiscal years were summarized. Since the radiation level in the reactors and buildings of the Fukushima Daiichi Nuclear Power Station, Tokyo Electric Power Company Holdings, Inc. (1F) is extremely high due to the accident, it is required to develop radiation measurement technology based on the needs at the 1F working site. In this study, we will develop technologies towards practical application of revolutionary radiation measurement system based on the dose measurement technology utilizing solar cell devices.
Collaborative Laboratories for Advanced Decommissioning Science; National Institute of Technology, Kisarazu College*
JAEA-Review 2020-051, 97 Pages, 2021/02
JAEA-Review-2020-051.pdf:5.02MB
JAEA/CLADS had been conducting the Nuclear Energy Science & Technology and Human Resource Development Project in FY2019. Among the adopted proposals in FY2018, this report summarizes the research results of the "Development of Dosimeter for Severe Radiation Environment near Reactor Pressure Vessel" conducted in FY2019.
Collaborative Laboratories for Advanced Decommissioning Science; National Institute of Technology, Kisarazu College*
JAEA-Review 2019-033, 57 Pages, 2020/03
JAEA-Review-2019-033.pdf:3.17MB
JAEA/CLADS, had been conducting the Center of World Intelligence Project for Nuclear Science/Technology and Human Resource Development (hereafter referred to "the Project") in FY2018. The Project aims to contribute to solving problems in nuclear energy field represented by the decommissioning of the Fukushima Daiichi Nuclear Power Station, Tokyo Electric Power Company Holdings, Inc. For this purpose, intelligence was collected from all over the world, and basic research and human resource development were promoted by closely integrating/collaborating knowledge and experiences in various fields beyond the barrier of conventional organizations and research fields. Among the adopted proposals in FY2018, this report summarizes the research results of the "Development of Dosimeter for Severe Radiation Environment near Reactor Pressure Vessel". Since the radiation level in the reactors and buildings of the Fukushima Daiichi Nuclear Power Station, Tokyo Electric Power Company Holdings, Inc. (1F) is extremely high due to the accident, it is required to develop radiation measurement technology based on the needs at the 1F working site. In the previous studies, it has been verified that dosimeters using solar cell devices can be used for dose evaluation under high dose rate near the reactor pressure vessel because they have advantages such as unnecessity of a high-voltage source, ultra-compactness, lightweight, and high radiation resistance. Through this study, we will develop technologies towards practical application of revolutionary radiation measurement system based on the dose measurement technology utilizing solar cell devices.
/p-AlInGaP solar cellsLee, H. S.*; Yamaguchi, Masafumi*; Ekins-Daukes, N. J.*; Khan, A.*; Takamoto, Tatsuya*; Imaizumi, Mitsuru*; Oshima, Takeshi; Ito, Hisayoshi
Physica B; Condensed Matter, 376-377, p.564 - 567, 2006/04
Times Cited Count：2 Percentile：12.58(Physics, Condensed Matter)no abstracts in English
Imaizumi, Mitsuru*; Sumita, Taishi*; Kawakita, Shiro*; Oshima, Takeshi; Ito, Hisayoshi; Kuwajima, Saburo*
Proceedings of 31st IEEE Photovoltaic Specialists Conference and Exhibition (PVSC-31), p.563 - 566, 2005/00
no abstracts in English
Lee, H. S.*; Ekins-Daukes, N. J.*; Sasaki, Takuo*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Agui, Takaaki*; Kamimura, Kunio*; Kaneiwa, Minoru*; Imaizumi, Mitsuru*; et al.
Proceedings of 31st IEEE Photovoltaic Specialists Conference and Exhibition (PVSC-31), p.556 - 558, 2005/00
no abstracts in English
Ekins-Daukes, N. J.*; Arafune, Koji*; Lee, H. S.*; Sasaki, Takuo*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Agui, Takaaki*; Kamimura, Kunio*; Kaneiwa, Minoru*; et al.
Proceedings of 31st IEEE Photovoltaic Specialists Conference and Exhibition (PVSC-31), p.683 - 686, 2005/00
no abstracts in English
Ekins-Daukes, N. J.*; Lee, H. S.*; Sasaki, Takuo*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Agui, Takaaki*; Kamimura, Kunio*; Kaneiwa, Minoru*; Imaizumi, Mitsuru*; et al.
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.87 - 91, 2004/10
no abstracts in English
Ekins-Daukes, N. J.*; Lee, H. S.*; Sasaki, Takuo*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Agui, Takaaki*; Kamimura, Kunio*; Kaneiwa, Minoru*; Imaizumi, Mitsuru*; et al.
Applied Physics Letters, 85(13), p.2511 - 2513, 2004/09
Times Cited Count：11 Percentile：42.77(Physics, Applied)no abstracts in English
Imaizumi, Mitsuru*; Takamoto, Tatsuya*; Sumita, Taishi*; Oshima, Takeshi; Yamaguchi, Masafumi*; Matsuda, Sumio*; Oi, Akihiko; Kamiya, Tomihiro
Proceedings of 3rd World Conference on Photovoltaic Energy Conversion (WCPEC-3) (CD-ROM), 4 Pages, 2004/01
The radiation response of InGaP, InGaAs and Ge single junction sub-cells in the triple junction space solar cell are studied in order to develop a device simulator which predicts the End-Of-Life performance of space solar cells. InGaP top-cells show no significant difference in radiation response between under AM0 light and dark conditions during irradiation. The radiation resistance of InGaAs cell which is used as middle cell decreases with increasing In contents. The Ge cell shows lower radiation reisitance as compared to InGaP and InGaAs cells.
/p InGaP solar cellDharmarasu, N.*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*
Solar Energy Materials and Solar Cells, 75(1-2), p.327 - 333, 2003/01
Times Cited Count：3 Percentile：30.01(Energy & Fuels)n/p InGaP junctions were irradiated with 100keV-protons, and the effect on their electrical properties were studied using C-V and DLTS methods.The n/p InGaP junctions were fabricated by MOCVD method.They were irradiated up to 1E12 /cm
at RT. The carrier removal rate was estimated to be 6.1E4 cm
from the fluence dependence of carrier concentration. H1 peaks which were observed at 400 K in DLTS measurements were found after irradiation.It was concluded that H1 peaks relates residual defects which act as carrier removal centers.
Oshima, Takeshi; Imaizumi, Mitsuru*; Takamoto, Tatsuya*; Sumita, Taishi*; Oi, Akihiko; Kawakita, Shiro*; Ito, Hisayoshi; Matsuda, Sumio*
Proceedings of 5th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications, p.113 - 116, 2002/10
The effects on proton and electron irradiateions of the characteristics of InGaP/GaAs/Ge triple junction designed for terrestrial application were studied. The solar cells used in this study has a 1% In-contained GaAs middle sub-cell, and their efficiency is more than 30 % under AM1.5, which is the highest efficiency of all solar cells in the world.As the results of 1MeV-electron and 10 MeV-proton irradiation, terrestrial triple-junction sole cells were found to have the same radiation resistance as space single junction GaAs solar cells, although terrestrial triple-junction solar cells is not stronger than space triple-junction solar cells made in USA. As the result of proton energy dependence of the electrical characteristics and quantum efficiency, the strong degradation of the GaAs middle cell was observed.
-InGaP space solar cellsDharmarasu, N.*; Yamaguchi, Masafumi*; Bourgoin, J. C.*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*
Applied Physics Letters, 81(1), p.64 - 66, 2002/07
Times Cited Count：17 Percentile：55.85(Physics, Applied)We studied the properties of observed defects in n/p-InGaP solar cells created by irradiation of protons with different energies.Three majority (hole) and a minority-carrier traps, labeled respectively as HP1 (E
+0.90
0.05eV), HP2 (E+0.730.05eV), H2 (E +0.55eV),and EP1 (E
0.54eV),were identified using deep level transient spectroscopy. All majority-carrier traps were found to act as recombination centers. While the H2 traps present in the proton-irradiated p-InGaP was found to anneal out by minority-carrier injection, the other traps were not.
InGaP solar CellsDharmarasu, N.*; Khan, A.*; Yamaguchi, Masafumi*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*
Journal of Applied Physics, 91(5), p.3306 - 3311, 2002/03
Times Cited Count：25 Percentile：66.97(Physics, Applied)3MeV proton irradiation effects on InGaP single junction and InGaP/GaAs two junction cells were studied. The degradation of electrocal properties for InGaP cells was smaller than that for InGaP/GaAs cells. The results of the measurement of spectral response showed the large degradation in long wavelength. This indicates that GaAs cell degrades. The Damage coefficient of minority carrier diffusion length was estimated to be 7.9
10
for InGaP and 1.610
for GaAs. These values of the damage coefficient for InGaP and GaAs are 580 times and 280 times larger than those for InGaP and GaAs irradiated with 1MeV electrons.
/p InGaP solar cellDharmarasu, N.*; Yamaguchi, Masafumi*; Khan, K.*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*
Physica B; Condensed Matter, 308-310, p.1181 - 1184, 2001/12
Times Cited Count：7 Percentile：41.38(Physics, Condensed Matter)Carrier concentration and defects in n+/p InGaP irradiated with 100keV-protons (1E10, 5E12 /cm2) were studied.As a result of C-V measurements, the carrier removal rate was estimated to be 6.1E4 /cm2 which was extremely high as compared to 1MeV-electron irradiation case (0.93 /cm). H1 peak whose energy corresponds to Ev+0.90V was obtained from DLTS measurements. This suggests that carrier removal rate in proton-irradiated ones is much higher than that in electron-irradiated ones due to the generation of the defects (H1 peak) which act as majority carrier traps.
Dharmarasu, N.*; Yamaguchi, Masafumi*; Khan, A.*; Yamada, Takashi*; Tanabe, Tatsuya*; Takagishi, Shigenori*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; et al.
Applied Physics Letters, 79(15), p.2399 - 2401, 2001/10
Times Cited Count：75 Percentile：90.93(Physics, Applied)The radiation response of 3MeV proton-irradiated InGaP, InGaAsP, and InGaAs solar cells was measured and analyzed in comparison with those of InP and GaAs. The degradation of the minority-carrier diffusion length was estimated from the spectral response. The damage coefficient K
for 3MeV proton-irradiated InGaP, InGaAsP and InGaAs was also determined. The radiation resistance increases with increase in the function of In-P bonds in those materials. Minority-carrier injection under forward bias is found to cause partial recovery of the degradation on irradiated InGaP and InGaAsP cells.
*; *; Matsuda, Sumio*; Oshima, Takeshi; Nashiyama, Isamu
Proceedings of 3rd International Workshop on Radiation Effects on Semiconductor Devices for Space Application, p.63 - 68, 1998/00
no abstracts in English
Imaizumi, Mitsuru*; Nakamura, Tetsuya*; Oshima, Takeshi
no journal, ,
no abstracts in English
